RF Power transistors designed for CW and pulsed applications operating at 1300 MHz. These devices are suitable for use in CW and pulsed applications.
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扫码加入ARCHIVED - MRF6V13250HR3, MRF6V13250HSR3 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs
RF Power transistors designed for CW and pulsed applications operating at 1300 MHz. These devices are suitable for use in CW and pulsed applications.
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