A2T18S160W31 32 W RF power LDMOS transistors for cellular base station applications requiring very wide instantaneous bandwidth in the 1805-1995 MHz bands
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扫码加入ARCHIVED - A2T18S160W31S, A2T18S160W31GS 1805-1995 MHz, 32 W Avg., 28 V Airfast<sup>?</sup> RF Power LDMOS Transistors Data Sheet
A2T18S160W31 32 W RF power LDMOS transistors for cellular base station applications requiring very wide instantaneous bandwidth in the 1805-1995 MHz bands
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