【颁奖】GaN器件知多少？Qorvo GaN器件大起底！

doatello

大家发的器件不要重复呀~

limale

RFG1M09090
700 - 1000 MHz, 90 Watt GaN Power Amplifier

关键性能

Advanced GaN HEMT Technology
Typical Peak Modulated Power > 120W
Advanced Heat-Sink Technology
Single Circuit for 865MHz To 960MHz
48V Operation Typical Performance:
POUT = 44dBm
Gain = 20dB
Drain Efficiency = 38%
ACP = -33.5dBc
Linearizable to - 55dBc with DPD - 25 to 85 degrees C Operating Temperature
Optimized for Video Bandwidth and Minimized Memory Effects
RF Tested for 3GPP Performance
RF Tested for Peak Power Using IS95
Large Signal Models Available

频率最小值(MHz)        865
频率最大值(MHz)        960
增益(dB)        20
Psat(dBm)        51
漏极效率(%)        45
VD(V)        48
Idq(mA)        300
封装类型        RF400-2

limale

RFG1M09180
700 - 1000 MHz, 180 Watt GaN Power Amplifier

关键性能

Advanced GaN HEMT Technology
Typical Peak Modulated Power > 240W
Advanced Heat Sink Technology
Single Circuit for 865MHz To 960MHz
48V Operation Typical Performance:
POUT = 47dBm
Gain = 20dB
Drain Efficiency = 39%
ACP = -32.5dBc
Linearizable to - 55dBc with DPD
-25 to 85 degrees C Operating Temperature
Optimized for Video Bandwidth and Minimized Memory Effects
RF Tested for 3GPP Performance
RF Tested for Peak Power Using IS95
Large Signal Models Available

频率最小值(MHz)        865
频率最大值(MHz)        960
增益(dB)        20
Psat(dBm)        54
漏极效率(%)        43
VD(V)        48
Idq(mA)        600
封装类型        RF400-2 with flange

limale

T1G2028536-FL
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor

关键性能

Frequency: DC to 2 GHz
Output power (P3dB): 260 W at 1.2 GHz
Linear gain: 18 dB at 1.2 GHz
Operating voltage: 36 V
Low thermal resistance package

频率最小值(MHz)        DC
频率最大值(MHz)        2,000
增益(dB)        19
Psat(dBm)        54.2
漏极效率(%)        54
VD(V)        36 to 50
Idq(mA)        576
封装类型        NI-780

limale

TGF2965-SM
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor


关键性能

Frequency range: 0.03 - 3 GHz
Output power (P3dB): 6.0W at 2 GHz
Linear gain: 18 dB typical at 2 GHz
Typical PAE3dB: 63% at 2 GHz
Operating voltage: 32V
Low thermal resistance package
CW and pulse capable
3 x 3 mm package

频率最小值(MHz)        30
频率最大值(MHz)        3,000
增益(dB)        18
Psat(dBm)        37.8
PAE(%)        63
VD(V)        32
Idq(mA)        25
封装类型        QFN
封装(mm)        3 x 3

limale

QPD2793
2.62 - 2.69 GHz, 200 Watt, 48 V GaN RF Power Transistor

关键性能

Frequency range: 2.62-2.69 GHz, Band 7
Drain voltage: 48V
Output power (P3dB): 200W
Maximum drain efficiency: 75%
NI-400 ceramic package


频率最小值(MHz)        2,620
频率最大值(MHz)        2,690
增益(dB)        23
Psat(dBm)        53
PAE(%)        75
VD(V)        48
Idq(mA)        360
封装类型        NI-400

limale

TQP0104
DC - 4 GHz, 30 Watt GaN Power Transistor

关键性能

Frequency: DC to 4 GHz
Output Power (P3dB): 44.6 dBm
Linear Gain: 17 dB
Operating Voltage: 32 V
Drain Efficiency: 64% at P3dB
Package Dimensions: 3 x 4 mm QFN

频率最小值(MHz)        DC
频率最大值(MHz)        4,000
增益(dB)        17
Psat(dBm)        44.6
PAE(%)        60
VD(V)        32
Idq(mA)        70

limale

TGF2819-FL
DC - 3.5 GHz, 100 Watt, 32 - 50 V GaN RF Power Transistor

关键性能

Frequency range: DC - 3.5GHz
Output power (P3dB): 126 W at 3.3GHz
Linear gain: > 14 dB typical at 3.3 GHz
Typical PAE3dB: > 58 % at 3.3 GHz
Operating voltage: 32 - 50V
Low thermal resistance package

频率最小值(MHz)        DC
频率最大值(MHz)        3,500
增益(dB)        > 14
Psat(dBm)        51
PAE(%)        58
VD(V)        32 to 50
Idq(mA)        250
封装类型        NI-360

limale

TGF2952
DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT

关键性能

Frequency range: DC - 14 GHz
38.4dBm nominal Psat at 3 GHz
75.7% maximum PAE at 3 GHz
20.4dB nominal power gain at 3GHz
Bias: Vd = 32V, Idq = 25mA
Technology: 0.25 um power GaN on SiC
Chip dimensions: 0.82 x 1.01 x 0.10 mm

频率最小值(MHz)        DC
频率最大值(MHz)        14,000
增益(dB)        20.4
Psat(dBm)        38.4
PAE(%)        75.7
VD(V)        32
Idq(mA)        25
封装类型        Die

limale

T2G6000528-Q3
DC - 6 GHz, 7 Watt, 28 V GaN RF Power Transistor

关键性能

Frequency: DC to 6 GHz
Linear Gain: 17 dB at 3.3 GHz
Operating Voltage: 28 V
Output Power (P3dB): 10 W at 3.3 GHz
Lead-free and RoHS compliant
Low thermal resistance package

频率最小值(MHz)        DC
频率最大值(MHz)        6,000
增益(dB)        17
Psat(dBm)        40
漏极效率(%)        53
VD(V)        28
Idq(mA)        50
封装类型        NI-200